UF3C065040K4S

onsemi
431-UF3C065040K4S
UF3C065040K4S

製造商：

說明：
碳化矽MOSFET 650V/40MOSICFETG3TO247

規格書:
ECAD模型:
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庫存量: 3,297

庫存：
3,297 可立即送貨
工廠前置作業時間：
31 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$534.82 NT$534.82
NT$397.46 NT$3,974.60

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
54 A
52 mOhms
- 25 V, + 25 V
4 V
43 nC
- 55 C
+ 175 C
326 W
Enhancement
AEC-Q101
SiC FET
品牌: onsemi
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: PH
封裝: Tube
產品類型: SiC MOSFETS
系列: UF3C
原廠包裝數量: 600
子類別: Transistors
技術: SiC
每件重量: 6 g
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所選屬性: 0

規格書

Models

PCN

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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