2ED21824S06JXUMA1

Infineon Technologies
726-2ED21824S06JXUMA
2ED21824S06JXUMA1

製造商：

說明：
閘極驅動器 LEVEL SHIFT DRIVER

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 5,706

庫存：
5,706 可立即送貨
工廠前置作業時間：
34 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲（訂購多個2500）

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™ †
NT$72.08 NT$72.08
NT$53.38 NT$533.80
NT$48.62 NT$1,215.50
NT$43.52 NT$4,352.00
NT$41.14 NT$10,285.00
NT$39.44 NT$19,720.00
NT$38.42 NT$38,420.00
完整捲（訂購多個2500）
NT$37.74 NT$94,350.00
NT$37.06 NT$185,300.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 閘極驅動器
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
DSO-14
1 Driver
1 Output
2.5 A
10 V
20 V
15 ns
15 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
邏輯類型: CMOS, LSTTL
最長斷開延遲時間: 300 ns
最長接通延遲時間: 300 ns
濕度敏感: Yes
運作供電電流: 550 uA
Pd - 功率消耗 : 1 W
產品類型: Gate Drivers
傳輸延遲 - 最大值: 300 ns
關機: Shutdown
原廠包裝數量: 2500
子類別: PMIC - Power Management ICs
技術: Si
零件號別名: 2ED21824S06J SP003244528
每件重量: 138.510 mg
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所選屬性: 0

規格書

Models

Product Catalogs

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

2ED210x低電流650V半橋閘極驅動器

Infineon 2ED210x低電流650V半橋閘極驅動器配備整合式靴帶式二極體，採用DSO-8或DSO-14封裝。2ED210x低電流0.7A驅動器是基於絕緣體上矽 (SOI) 技術。SOI技術是一種高電壓、電平偏移技術，具有獨特、可衡量以及業內最佳的優勢。其中包括整合式靴帶式二極體 (BSD) 及業界最佳的穩健性，可防止負瞬態電壓尖峰。該技術也可以降低電平轉換功率損耗，從而最大限度地降低裝置開關功耗。先進的流程支持採用具有技術增強優勢的單片高壓及低壓電路結構。

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

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