AS4C32M16D2C-25BCN

Alliance Memory
913-S4C32M16D2C25BCN
AS4C32M16D2C-25BCN

製造商:

說明:
DRAM DDR2, 512Mb, 32M x 16, 1.8V, 84-ball BGA, 400 MHz, Commercial Temp - Tray

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 198

庫存:
198 可立即送貨
工廠前置作業時間:
6 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$153.68 NT$153.68
NT$142.12 NT$1,421.20
NT$137.70 NT$3,442.50
NT$134.64 NT$6,732.00
NT$131.24 NT$13,124.00
NT$127.16 NT$26,576.44
NT$124.10 NT$51,873.80
NT$123.08 NT$128,618.60
NT$117.30 NT$294,188.40

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM - DDR2
512 Mbit
16 bit
400 MHz
FBGA-84
32 M x 16
400 ps
1.7 V
1.9 V
0 C
+ 85 C
Tray
品牌: Alliance Memory
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 209
子類別: Memory & Data Storage
電源電流 - 最大值: 75 mA
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所選屬性: 0

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CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320299
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.