IXFN210N30P3

IXYS
747-IXFN210N30P3
IXFN210N30P3

製造商:

說明:
MOSFET模組 N-Channel: Power MOSFET w/Fast Diode

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 493

庫存:
493 可立即送貨
工廠前置作業時間:
24 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$1,972.83 NT$1,972.83
NT$1,534.74 NT$15,347.40

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET模組
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
300 V
192 A
14.5 mOhms
- 20 V, + 20 V
- 55 C
+ 150 C
1.5 kW
IXFN210N30
Tube
品牌: IXYS
配置: Single
下降時間: 13 ns
產品類型: MOSFET Modules
上升時間: 25 ns
原廠包裝數量: 10
子類別: Discrete and Power Modules
公司名稱: HiPerFET
類型: HiperFET
標準斷開延遲時間: 94 ns
標準開啟延遲時間: 46 ns
每件重量: 30 g
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所選屬性: 0

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合規守則
CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
原產地分類
原產國:
大韓民國
封裝原產國:
無資料
擴散國:
無資料
出貨時,國家可能會有所變更。

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

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