Name: IXYS IXFP4N100P
Brand: IXYS
SKU: 747-IXFP4N100P
Price: 174.76 TWD
Availability: InStock

說明：

MOSFET 4 Amps 1000V

Pricing (TWD)

數量	單價	總價
	NT$174.76	NT$174.76
	NT$115.94	NT$1,159.40
	NT$76.50	NT$7,650.00
	NT$72.08	NT$36,040.00

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1 kV
Id - C連續漏極電流:	4 A
Rds On - 漏-源電阻:	3.3 Ohms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	6 V
Qg - 閘極充電:	26 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	150 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
下降時間:	50 ns
互導 - 最小值:	1.8 S
產品類型:	MOSFETs
上升時間:	36 ns
系列:	IXFP4N100
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	37 ns
標準開啟延遲時間:	24 ns
每件重量:	2 g

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規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.

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HiPerFET™ Power MOSFETs

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