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IXFX52N100X

Name: IXYS IXFX52N100X
Brand: IXYS
SKU: 747-IXFX52N100X
Price: 1226.04 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

747-IXFX52N100X

製造商編號：

IXFX52N100X

製造商：

IXYS

說明：

MOSFET 1000V 52A PLUS247 Power MOSFET

規格書:

IXFX52N100X 規格書

ECAD模型:

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庫存量: 195

庫存：: 195 可立即送貨

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工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

數量超過195會受到最小訂單要求的限制。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$1,226.04	NT$1,226.04
	NT$910.18	NT$9,101.80
	NT$867.68	NT$104,121.60
	NT$759.22	NT$387,202.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-PLUS-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1 kV
Id - C連續漏極電流:	52 A
Rds On - 漏-源電阻:	125 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3.5 V
Qg - 閘極充電:	245 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	1.25 mW
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	9 ns
互導 - 最小值:	23 S
產品類型:	MOSFETs
上升時間:	13 ns
系列:	X-Class
原廠包裝數量:	30
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	107 ns
標準開啟延遲時間:	34 ns
每件重量:	6 g

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篩選文檔:

規格書

IXFX52N100X 規格書

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Off-Board Charger Sub-Unit Power Converters

Littelfuse Off-Board Charger Sub-Unit Power Converters are required for DC charging stations capable of charging to 80% SOC in under 30 minutes. These fast-charging applications require modular power converters, which can be paralleled to cater to different power levels, thereby enabling fast charging. The most critical parameters are energy density and system efficiency. A sub-unit power converter in a DC charging station consists of an AC/DC power stage and DC/DC power stage integrated into the charging station.

電動車輛充電解決方案

Littelfuse電動車輛(EV)充電解決方案允許設計人員選擇理想解決方案以確保EV充電單元的功能和安全。非車載EV充電解決站可在極熱、極冷、雨、雪和雷暴天氣的惡劣環境中使用。Littelfuse產品可防護這些危險，盡量減低故障風險。

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

X-Class Power MOSFETs

IXYS X-Class Power MOSFETs are high-power density N-Channel Enhancement Mode MOSFETs. They are easy to mount and have a low R_DS(ON) and Q_Gwith a low package inductance. Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters and PFC circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

非公路用電動車解決方案

Littelfuse為非公路用電動車提供廣泛的解決方案。這些電動車採用類似架構，適用電壓範圍介於48V至400V。非公路用電動車包括有電動堆高機、高爾夫球車、三輪車、牽引車、壓路機和挖掘機。

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.