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IXTP230N04T4M

Name: IXYS IXTP230N04T4M
Brand: IXYS
SKU: 747-IXTP230N04T4M
Price: 149.94 TWD
Availability: OutOfStock

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Mouser 編號：

747-IXTP230N04T4M

製造商編號：

IXTP230N04T4M

製造商：

IXYS

說明：

MOSFET Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP

規格書:

IXTP230N04T4M 規格書

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最少： 1 多個： 1

單價:

NT$-.--

總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$149.94	NT$149.94
	NT$98.26	NT$982.60
	NT$73.44	NT$7,344.00
	NT$65.28	NT$32,640.00
	NT$57.80	NT$57,800.00

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
Vds - 漏-源擊穿電壓:	40 V
Id - C連續漏極電流:	230 A
Rds On - 漏-源電阻:	2.9 mOhms
Vgs - 閘極-源極電壓:	- 15 V, 15 V
Vgs th - 門源門限電壓 :	2 V
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	340 W
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	82 ns
產品類型:	MOSFETs
上升時間:	143 ns
原廠包裝數量:	50
子類別:	Transistors
標準斷開延遲時間:	85 ns
標準開啟延遲時間:	40 ns
每件重量:	2 g

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規格書

IXTP230N04T4M 規格書

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

40V TrenchT4 Power MOSFETs

IXYS 40V TrenchT4 Power MOSFETs are easy-to-mount N-Channel enhancement MOSFETs housed in international standard packages. The series offers high current handling capability and 175°C maximum operating temperature. These avalanche-rated MOSFETs feature low R_DS(on)and a fast intrinsic rectifier. Typical applications for IXYS 40V TrenchT4 Power MOSFETs include synchronous buck converters, high current switching power supplies, battery-powered electric motors, resonant-mode power supplies, DC-DC converters, offline uninterruptible power supplies (UPS), primary-side switches, and much more.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.