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IPD60R180CM8XTMA1

Name: Infineon IPD60R180CM8XTMA1
Brand: Infineon Technologies
SKU: 726-IPD60R180CM8XTMA
Price: 101.46 TWD
Availability: OutOfStock

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請參閱產品規格

Mouser 編號：

726-IPD60R180CM8XTMA

製造商編號：

IPD60R180CM8XTMA1

製造商：

Infineon Technologies

說明：

MOSFET HIGH POWER_NEW

規格書:

IPD60R180CM8XTMA1 規格書 (PDF)

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庫存：: 0

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在途量:: 2,479

預期2026/8/13
工廠前置作業時間：: 34

週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$101.46	NT$101.46
	NT$65.25	NT$652.50
	NT$44.81	NT$4,481.00
	NT$36.57	NT$18,285.00
	NT$34.63	NT$34,630.00
完整捲（訂購多個2500）
	NT$31.98	NT$79,950.00

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	TO-252-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	18 A
Rds On - 漏-源電阻:	180 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4.7 V
Qg - 閘極充電:	17 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	127 W
通道模式:	Enhancement
公司名稱:	CoolMOS
封裝:	Reel
封裝:	Cut Tape
品牌:	Infineon Technologies
配置:	Single
下降時間:	12.8 ns
產品類型:	MOSFETs
上升時間:	6 ns
系列:	600V CM8
原廠包裝數量:	2500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	88.4 ns
標準開啟延遲時間:	17.2 ns
零件號別名:	IPD60R180CM8 SP005578057

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規格書

IPD60R180CM8XTMA1 規格書 (PDF)

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合規守則

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 德國
封裝原產國:: 中國
擴散國:: 奧地利

出貨時，國家可能會有所變更。

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7，英飛淩不斷在價格、性能和品質等方面樹立標杆。

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.