MSC015SDA120B

Microchip Technology
494-MSC015SDA120B
MSC015SDA120B

製造商:

說明:
碳化矽肖特基二極管 UNRLS, FG, GEN2 SIC SBD

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 158

庫存:
158 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$229.50 NT$229.50
NT$211.48 NT$2,114.80
NT$186.66 NT$5,599.80
NT$183.94 NT$22,072.80
NT$183.60 NT$187,272.00

商品屬性 屬性值 選擇屬性
Microchip
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-247-2
Single
15 A
1.2 kV
1.5 V
109 A
200 uA
- 55 C
+ 175 C
MSC0
Tube
品牌: Microchip Technology
Pd - 功率消耗 : 167 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 30
子類別: Diodes & Rectifiers
Vr - 反向電壓: 1.2 kV
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所選屬性: 0

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CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
BRHTS:
85411099
ECCN:
EAR99

碳化矽(SiC)肖特基能障二極體

Microsemi / Microchip碳化矽肖特基能障二極體具有出色的動態性能及熱性能,優於傳統的矽功率二極體。與純矽裝置相比,碳化矽裝置具有更高的介電擊穿場強、更高的帶隙及更高的熱導率。碳化矽肖特基二極體具有零正向及反向恢復電荷,可減少二極體的開關損耗。這些裝置還設有溫度獨立開關,可確保穩定的高溫性能。

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.