RQ6P020ATTCR

ROHM Semiconductor
755-RQ6P020ATTCR
RQ6P020ATTCR

製造商:

說明:
MOSFET Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive)

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 4,215

庫存:
4,215 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$30.94 NT$30.94
NT$22.03 NT$220.30
NT$14.76 NT$1,476.00
NT$11.39 NT$5,695.00
NT$10.34 NT$10,340.00
完整捲(訂購多個3000)
NT$8.91 NT$26,730.00
NT$8.23 NT$49,380.00
NT$7.68 NT$69,120.00
NT$7.58 NT$181,920.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
SOT-457T-6
P-Channel
1 Channel
100 V
2 A
220 mOhms
- 20 V, 20 V
2.5 V
24 nC
- 55 C
+ 150 C
1.25 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 30 ns
互導 - 最小值: 3.4 S
產品類型: MOSFETs
上升時間: 11 ns
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 P-Channel
標準斷開延遲時間: 83 ns
標準開啟延遲時間: 8.9 ns
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

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