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STD9N65M2

Name: STMicroelectronics STD9N65M2
Brand: STMicroelectronics
SKU: 511-STD9N65M2
Price: 70.38 TWD
Availability: OutOfStock

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請參閱產品規格

Mouser 編號：

511-STD9N65M2

製造商編號：

STD9N65M2

製造商：

STMicroelectronics

說明：

MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package

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規格書:

STD9N65M2 規格書 (PDF)

ECAD模型:

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庫存：: 暫無庫存

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工廠前置作業時間：: 16 週工廠預計生產時間。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個2500）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$70.38	NT$70.38
	NT$45.22	NT$452.20
	NT$30.50	NT$3,050.00
	NT$24.28	NT$12,140.00
	NT$22.27	NT$22,270.00
完整捲（訂購多個2500）
	NT$21.45	NT$53,625.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DPAK-3 (TO-252-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	5 A
Rds On - 漏-源電阻:	900 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	10 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	60 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	18 ns
產品類型:	MOSFETs
上升時間:	6.6 ns
系列:	STD9N65M2
原廠包裝數量:	2500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	22.5 ns
標準開啟延遲時間:	7.5 ns
每件重量:	330 mg

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所選屬性: 0

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

篩選文檔:

規格書

STD9N65M2 規格書 (PDF)

PCN

MDmesh M2 Technology 8” Wafer Front-end Capacity Extension (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.