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STDRIVEG210Q

Name: STMicroelectronics STDRIVEG210Q
Brand: STMicroelectronics
SKU: 511-STDRIVEG210Q
Price: 98.23 TWD
Availability: InStock

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Mouser 編號：

511-STDRIVEG210Q

製造商編號：

STDRIVEG210Q

製造商：

STMicroelectronics

說明：

閘極驅動器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V

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規格書:

STDRIVEG210Q 規格書 (PDF)

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庫存量: 665

庫存：: 665 可立即送貨

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工廠前置作業時間：: 52 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$98.23	NT$98.23
	NT$73.49	NT$734.90
	NT$67.04	NT$1,676.00
	NT$60.23	NT$6,023.00
	NT$57.00	NT$14,250.00
	NT$54.49	NT$26,700.10
	NT$52.34	NT$51,293.20
	NT$50.19	NT$147,558.60
	NT$49.83	NT$268,583.70

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	閘極驅動器
RoHS:
產品:	Gate Drivers
類型:	Half-Bridge
安裝風格:	SMD/SMT
封裝/外殼:	QFN-18
驅動器數:	2 Driver
輸出數:	2 Output
輸出電流:	1.05 A, 2.4 A
電源電壓 - 最小值:	9.2 V
電源電壓 - 最大值:	18 V
上升時間:	22 ns
下降時間:	11 ns
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
封裝:	Tray
品牌:	STMicroelectronics
輸入電壓（最大值）:	20 V
輸入電壓（最小值）:	3 V
最長斷開延遲時間:	60 ns
最長接通延遲時間:	60 ns
濕度敏感:	Yes
運作供電電流:	920 uA
輸出電壓:	220 V
產品類型:	Gate Drivers
傳輸延遲 - 最大值:	60 ns
Rds On - 漏-源電阻:	7 Ohms
關機:	Shutdown
原廠包裝數量:	490
子類別:	PMIC - Power Management ICs
技術:	GaN

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所選屬性: 0

篩選文檔:

規格書

STDRIVEG210Q 規格書 (PDF)

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合規守則

USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

原產地分類

原產國:: 泰國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG210 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG210 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG210 half-bridge gate drivers feature supply UVLOs tailored to fast startup and low-consumption soft-switching applications. The high-side regulator is characterized by a very short wake-up time to maximize the application efficiency during intermittent operation (burst mode). These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include DC/DC, AC/DC, resonant converters, synchronous rectification, UPS, adapters, LED lighting, and USB-C.