STF7N60M2

STMicroelectronics
511-STF7N60M2
STF7N60M2

製造商：

說明：
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
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規格書:
ECAD模型:
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庫存量: 1,898

庫存：
1,898 可立即送貨
工廠前置作業時間：
18 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$76.00 NT$76.00
NT$47.68 NT$476.80
NT$31.44 NT$3,144.00
NT$24.95 NT$12,475.00
NT$22.16 NT$22,160.00
NT$20.26 NT$40,520.00
NT$19.47 NT$97,350.00
NT$19.00 NT$190,000.00
25,000 報價

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
5 A
860 mOhms
- 25 V, 25 V
3 V
8.8 nC
- 55 C
+ 150 C
20 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
下降時間: 15.9 ns
產品類型: MOSFETs
上升時間: 7.2 ns
系列: STF7N60M2
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 19.3 ns
標準開啟延遲時間: 7.6 ns
每件重量: 2 g
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所選屬性: 0

規格書

PCN

合規守則
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
原產地分類
原產國:
新加坡
封裝原產國:
新加坡
擴散國:
無資料
出貨時，國家可能會有所變更。

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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