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STGP20V60DF

Name: STMicroelectronics STGP20V60DF
Brand: STMicroelectronics
SKU: 511-STGP20V60DF
Price: 100.38 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

511-STGP20V60DF

製造商編號：

STGP20V60DF

製造商：

STMicroelectronics

說明：

IGBT 600V 20A High Speed Trench Gate IGBT

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規格書:

STGP20V60DF 規格書 (PDF)

ECAD模型:

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庫存量: 851

庫存：: 851 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 15 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$100.38	NT$100.38
	NT$49.47	NT$494.70
	NT$43.74	NT$4,374.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-220-3
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	600 V
集電極-發射極飽和電壓:	2.3 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	40 A
Pd - 功率消耗 :	167 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	STGP20V60DF
封裝:	Tube
品牌:	STMicroelectronics
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	1000
子類別:	IGBTs
每件重量:	2.300 g

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所選屬性: 0

篩選文檔:

規格書

STGP20V60DF 規格書 (PDF)

PCN

合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.