似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

STGWA20H65DFB2

Name: STMicroelectronics STGWA20H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA20H65DFB2
Price: 118.66 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-STGWA20H65DFB2

製造商編號：

STGWA20H65DFB2

製造商：

STMicroelectronics

說明：

IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l

完成您的設計

規格書:

STGWA20H65DFB2 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics STGWA20H65DFB2的資訊

庫存量: 911

庫存：: 911 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$118.66	NT$118.66
	NT$67.40	NT$674.00
	NT$48.04	NT$4,804.00
	NT$41.59	NT$20,795.00
	NT$36.21	NT$43,452.00
	NT$34.17	NT$82,008.00
	NT$33.99	NT$367,092.00
25,200	報價

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-247-3
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	650 V
集電極-發射極飽和電壓:	1.65 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	40 A
Pd - 功率消耗 :	147 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
封裝:	Tube
品牌:	STMicroelectronics
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	600
子類別:	IGBTs
每件重量:	6.100 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

STGWA20H65DFB2 規格書 (PDF)

PCN

合規守則

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

STGWA20H65DFB2 HB2 IGBT

STMicroelectronics STGWA20H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA20H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.65V (typical) at an I_C of 20A.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.