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STGWA25H120DF2

Name: STMicroelectronics STGWA25H120DF2
Brand: STMicroelectronics
SKU: 511-STGWA25H120DF2
Price: 204.7 TWD
Availability: OutOfStock

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Mouser 編號：

511-STGWA25H120DF2

製造商編號：

STGWA25H120DF2

製造商：

STMicroelectronics

說明：

IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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規格書:

STGWA25H120DF2 規格書 (PDF)

ECAD模型:

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庫存：: 暫無庫存

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工廠前置作業時間：: 14 週工廠預計生產時間。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$204.70	NT$204.70
	NT$124.76	NT$1,247.60
	NT$98.59	NT$9,859.00
	NT$80.66	NT$48,396.00
	NT$74.57	NT$89,484.00
	NT$72.42	NT$217,260.00
	NT$69.91	NT$377,514.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	1.2 kV
集電極-發射極飽和電壓:	2.5 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	50 A
Pd - 功率消耗 :	375 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	STGWA25H120DF2
封裝:	Tube
品牌:	STMicroelectronics
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	600
子類別:	IGBTs
每件重量:	6.100 g

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所選屬性: 0

篩選文檔:

規格書

STGWA25H120DF2 規格書 (PDF)

PCN

合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.