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STGWT80H65DFB

Name: STMicroelectronics STGWT80H65DFB
Brand: STMicroelectronics
SKU: 511-STGWT80H65DFB
Price: 236.3 TWD
Availability: InStock

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Mouser 編號：

511-STGWT80H65DFB

製造商編號：

STGWT80H65DFB

製造商：

STMicroelectronics

說明：

IGBT Trench gate H series 650V 80A HiSpd

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規格書:

STGWT80H65DFB 規格書 (PDF)

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庫存量: 44

庫存：: 44 可立即送貨

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

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最少： 1 多個： 1

單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$236.30	NT$236.30
	NT$136.00	NT$1,360.00
	NT$113.56	NT$11,356.00
	NT$110.84	NT$66,504.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-3P
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	650 V
集電極-發射極飽和電壓:	1.6 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	120 A
Pd - 功率消耗 :	469 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	STGWT80H65DFB
封裝:	Tube
品牌:	STMicroelectronics
集電極最大連續電流Ic :	80 A
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	300
子類別:	IGBTs
每件重量:	6.756 g

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所選屬性: 0

篩選文檔:

規格書

STGWT80H65DFB 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.