似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

STP100N10F7

Name: STMicroelectronics STP100N10F7
Brand: STMicroelectronics
SKU: 511-STP100N10F7
Price: 92.14 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-STP100N10F7

製造商編號：

STP100N10F7

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150

完成您的設計

規格書:

STP100N10F7 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics STP100N10F7的資訊

庫存量: 169

庫存：: 169

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 1,000

預期2026/6/8
工廠前置作業時間：: 26

週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$92.14	NT$92.14
	NT$45.56	NT$455.60
	NT$42.84	NT$4,284.00
	NT$36.04	NT$18,020.00
	NT$30.09	NT$30,090.00
	NT$28.15	NT$56,300.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	100 V
Id - C連續漏極電流:	80 A
Rds On - 漏-源電阻:	8 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	56 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	150 W
通道模式:	Enhancement
公司名稱:	STripFET
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	16 ns
產品類型:	MOSFETs
上升時間:	40 ns
系列:	STP100N10F7
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	46 ns
標準開啟延遲時間:	27 ns
每件重量:	2 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

STP100N10F7 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.