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STP150N10F7

Name: STMicroelectronics STP150N10F7
Brand: STMicroelectronics
SKU: 511-STP150N10F7
Price: 94.18 TWD
Availability: InStock

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Mouser 編號：

511-STP150N10F7

製造商編號：

STP150N10F7

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 100V 0.0036Ohm typ. 110A

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規格書:

STP150N10F7 規格書 (PDF)

ECAD模型:

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庫存量: 3,099

庫存：: 3,099 可立即送貨

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工廠前置作業時間：: 19 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$94.18	NT$94.18
	NT$54.74	NT$547.40
	NT$51.68	NT$5,168.00
	NT$46.58	NT$23,290.00
	NT$43.52	NT$43,520.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	100 V
Id - C連續漏極電流:	110 A
Rds On - 漏-源電阻:	4.2 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4.5 V
Qg - 閘極充電:	117 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	250 W
通道模式:	Enhancement
公司名稱:	STripFET
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
組裝國家:	SG
擴散國:	Not Available
原產國:	SG
下降時間:	33 ns
產品類型:	MOSFETs
上升時間:	57 ns
系列:	STP150N10F7
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	72 ns
標準開啟延遲時間:	33 ns
每件重量:	2 g

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所選屬性: 0

篩選文檔:

規格書

STP150N10F7 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.