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STP7N60M2

Name: STMicroelectronics STP7N60M2
Brand: STMicroelectronics
SKU: 511-STP7N60M2
Price: 60.86 TWD
Availability: InStock

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Mouser 編號：

511-STP7N60M2

製造商編號：

STP7N60M2

製造商：

STMicroelectronics

說明：

MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2

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規格書:

STP7N60M2 規格書 (PDF)

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庫存量: 1,228

庫存：: 1,228

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在途量:: 2,000
工廠前置作業時間：: 14

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$60.86	NT$60.86
	NT$29.14	NT$291.40
	NT$26.01	NT$2,601.00
	NT$20.57	NT$10,285.00
	NT$18.77	NT$18,770.00
	NT$17.54	NT$35,080.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	5 A
Rds On - 漏-源電阻:	860 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	8.8 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	60 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	15.9 ns
產品類型:	MOSFETs
上升時間:	7.2 ns
系列:	STP7N60M2
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	19.3 ns
標準開啟延遲時間:	7.6 ns
每件重量:	2 g

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篩選文檔:

規格書

STP7N60M2 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.