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STU2N95K5

Name: STMicroelectronics STU2N95K5
Brand: STMicroelectronics
SKU: 511-STU2N95K5
Price: 68 TWD
Availability: InStock

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Mouser 編號：

511-STU2N95K5

製造商編號：

STU2N95K5

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 950V 4.2Ohm typ 2A Zener-protected

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規格書:

STU2N95K5 規格書 (PDF)

ECAD模型:

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庫存量: 1,602

庫存：: 1,602 可立即送貨

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

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最少： 1 多個： 1

單價:

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總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$68.00	NT$68.00
	NT$34.68	NT$346.80
	NT$28.05	NT$2,805.00
	NT$23.29	NT$11,645.00
	NT$20.67	NT$20,670.00
	NT$16.66	NT$49,980.00
	NT$16.42	NT$147,780.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-251-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	950 V
Id - C連續漏極電流:	2 A
Rds On - 漏-源電阻:	5 Ohms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	10 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	45 W
通道模式:	Enhancement
公司名稱:	SuperMESH
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	32.5 ns
產品類型:	MOSFETs
上升時間:	13.5 ns
系列:	STU2N95K5
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	20.5 ns
標準開啟延遲時間:	8.5 ns
每件重量:	340 mg

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篩選文檔:

規格書

STU2N95K5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.