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STW10N105K5

Name: STMicroelectronics STW10N105K5
Brand: STMicroelectronics
SKU: 511-STW10N105K5
Price: 164.22 TWD
Availability: OutOfStock

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Mouser 編號：

511-STW10N105K5

製造商編號：

STW10N105K5

製造商：

STMicroelectronics

說明：

MOSFET N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-247 package

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規格書:

STW10N105K5 規格書 (PDF)

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工廠前置作業時間：: 16 週工廠預計生產時間。

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單價:

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Pricing (TWD)

數量	單價	總價
	NT$164.22	NT$164.22
	NT$108.80	NT$1,088.00
	NT$86.36	NT$8,636.00
	NT$76.84	NT$46,104.00
	NT$65.62	NT$78,744.00
	NT$61.88	NT$185,640.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.05 kV
Id - C連續漏極電流:	6 A
Rds On - 漏-源電阻:	1.3 Ohms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	21.5 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	130 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	21.5 ns
產品類型:	MOSFETs
上升時間:	8 ns
系列:	STW10N105K5
原廠包裝數量:	600
子類別:	Transistors
標準斷開延遲時間:	50 ns
標準開啟延遲時間:	19 ns
每件重量:	6 g

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篩選文檔:

規格書

STW10N105K5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.