CSD16406Q3

Texas Instruments
595-CSD16406Q3
CSD16406Q3

製造商:

說明:
MOSFET N-Ch NexFET Power MO SFETs

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 10,907

庫存:
10,907 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™
NT$58.82 NT$58.82
NT$37.40 NT$374.00
NT$24.92 NT$2,492.00
NT$19.28 NT$9,640.00
NT$17.88 NT$17,880.00
完整捲(訂購多個2500)
NT$17.85 NT$44,625.00
NT$16.46 NT$82,300.00
NT$16.12 NT$403,000.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
VSON-CLIP-8
N-Channel
1 Channel
25 V
60 A
5.3 mOhms
- 12 V, 16 V
1.4 V
5.8 nC
- 55 C
+ 150 C
46 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
品牌: Texas Instruments
配置: Single
下降時間: 4.8 ns
產品類型: MOSFETs
上升時間: 12.9 ns
系列: CSD16406Q3
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel Power MOSFET
標準斷開延遲時間: 8.5 ns
標準開啟延遲時間: 7.3 ns
每件重量: 43.700 mg
找到產品:
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所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™功率MOSFET

Texas Instruments NexFET™功率MOSFET在相同電阻下可提供一半的閘極電荷,讓設計人員在雙倍頻率下達到90%的供電效率。這些NexFET功率MOSFET將垂直電流與橫向功率MOSFET結合。這些裝置具有低導通電阻,需要極低的閘極電荷,並採用符合產業標準的封裝尺寸。Texas Instruments NexFET功率MOSFET技術可改善高功率運算、網路、伺服器系統和電源供應器的能源效率。