CSD86350Q5D

Texas Instruments
595-CSD86350Q5D
CSD86350Q5D

製造商:

說明:
MOSFET Synch Buck NexFET Pw r Block MOSFET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 7,323

庫存:
7,323 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™
NT$134.64 NT$134.64
NT$88.06 NT$880.60
NT$67.66 NT$6,766.00
NT$57.46 NT$28,730.00
NT$53.04 NT$53,040.00
完整捲(訂購多個2500)
NT$46.92 NT$117,300.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

備用包裝

製造商 元件編號:
包裝:
Reel, Cut Tape, MouseReel
供貨情況:
庫存量
價格:
NT$161.50
最小值:
1

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SON-8
N-Channel
2 Channel
25 V
40 A
5 mOhms, 1.1 mOhms
- 8 V, 8 V
900 mV
10.7 nC, 25 nC
- 55 C
+ 150 C
13 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
品牌: Texas Instruments
配置: Dual
開發套件: CSD86350Q5DEVM-604, TPS53219EVM-690
下降時間: 2.3 ns, 21 ns
互導 - 最小值: 103 S, 132 S
產品類型: MOSFETs
上升時間: 21 ns, 23 ns
系列: CSD86350Q5D
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 2 N-Channel
標準斷開延遲時間: 9 ns, 24 ns
標準開啟延遲時間: 8 ns, 9 ns
每件重量: 170 mg
找到產品:
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所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™功率MOSFET

Texas Instruments NexFET™功率MOSFET在相同電阻下可提供一半的閘極電荷,讓設計人員在雙倍頻率下達到90%的供電效率。這些NexFET功率MOSFET將垂直電流與橫向功率MOSFET結合。這些裝置具有低導通電阻,需要極低的閘極電荷,並採用符合產業標準的封裝尺寸。Texas Instruments NexFET功率MOSFET技術可改善高功率運算、網路、伺服器系統和電源供應器的能源效率。

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.