TK100S04N1L,LQ
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TK100S04N1LLQ
TK100S04N1L,LQ
製造商：
說明：
MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
庫存量: 3,703
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庫存：
-
3,703 可立即送貨發生意外錯誤了。請稍後再試。
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工廠前置作業時間：
-
20 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (TWD)
規格書
Application Notes
- Applications of Low-Voltage One-Gate Logic ICs to Level Shift Circuits
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2