TK110Z65Z,S1F

Toshiba
757-TK110Z65ZS1F
TK110Z65Z,S1F

製造商:

說明:
MOSFET POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ

ECAD模型:
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供貨情況

庫存:
0

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在途量:
40
工廠前置作業時間:
21
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$229.50 NT$229.50
NT$135.32 NT$1,353.20
NT$112.54 NT$11,254.00
NT$96.56 NT$48,280.00

商品屬性 屬性值 選擇屬性
Toshiba
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
24 A
110 mOhms
- 10 V, 10 V
3 V
40 nC
- 55 C
+ 150 C
190 W
Enhancement
Tube
品牌: Toshiba
配置: Single
下降時間: 4 ns
產品類型: MOSFETs
上升時間: 18 ns
原廠包裝數量: 25
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 90 ns
標準開啟延遲時間: 45 ns
每件重量: 6 g
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET

Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET features a low 0.092Ω (typical) drain-source on-resistance, high-speed switching properties, and low capacitance. The TK110Z65Z also features an enhancement mode making it ideal for use in switching power supply applications.