TK2R9E10PL,S1X

Toshiba
757-TK2R9E10PLS1X
TK2R9E10PL,S1X

製造商：

說明：
MOSFET Power MOSFET ID=240A VDSS=100V

規格書:
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庫存量: 1,067

庫存：
1,067 可立即送貨
工廠前置作業時間：
20 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$139.06 NT$139.06
NT$68.68 NT$686.80
NT$65.96 NT$6,596.00
NT$59.16 NT$29,580.00
NT$54.40 NT$54,400.00
NT$49.30 NT$123,250.00

商品屬性 屬性值 選擇屬性
Toshiba
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
240 A
2.4 mOhms
- 20 V, 20 V
1.5 V
161 nC
- 55 C
+ 175 C
306 W
Enhancement
U-MOSIX-H
Tube
品牌: Toshiba
配置: Single
下降時間: 46 ns
產品類型: MOSFETs
上升時間: 22 ns
系列: TK2R9E10PL
原廠包裝數量: 50
子類別: Transistors
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

TK2R9E10PL Silicon N-channel MOSFET

Toshiba TK2R9E10PL Silicon N-channel MOSFET is a high-speed switching device with a small gate charge of 48nC. The device features a small output charge of 164nC. Toshiba TK2R9E10PL also has a low drain-source on-resistance RDS(ON) of 2.4mΩ and low leakage current.

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