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DMTH6010LPSQ-13

Name: Diodes Incorporated DMTH6010LPSQ-13
Brand: Diodes Incorporated
SKU: 621-DMTH6010LPSQ-13
Price: 55.08 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

621-DMTH6010LPSQ-13

製造商編號：

DMTH6010LPSQ-13

製造商：

Diodes Incorporated

說明：

MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A

規格書:

DMTH6010LPSQ-13 規格書 (PDF)

ECAD模型:

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庫存量: 2,729

庫存：: 2,729 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 24 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個2500）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$55.08	NT$55.08
	NT$43.52	NT$435.20
	NT$29.34	NT$2,934.00
	NT$23.73	NT$11,865.00
	NT$22.00	NT$22,000.00
完整捲（訂購多個2500）
	NT$19.24	NT$48,100.00
	NT$18.29	NT$91,450.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	PowerDI5060-8
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	60 V
Id - C連續漏極電流:	13.5 A
Rds On - 漏-源電阻:	6.4 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	1 V
Qg - 閘極充電:	41.3 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	136 W
通道模式:	Enhancement
資格:	AEC-Q101
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Diodes Incorporated
配置:	Single
下降時間:	9.7 ns
產品類型:	MOSFETs
上升時間:	4.3 ns
系列:	DMTH6010
原廠包裝數量:	2500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	23.4 ns
標準開啟延遲時間:	5.7 ns
每件重量:	96 mg

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所選屬性: 0

篩選文檔:

規格書

DMTH6010LPSQ-13 規格書 (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

DMTH601xLPSQ N-Channel Enhancement Mode MOSFETs

Diodes Inc. DMTH601xLPSQ 60V N-Channel Enhancement Mode MOSFETs are designed to meet the stringent requirements of automotive applications. DMTH601xLPSQ MOSFETs are qualified to AEC-Q101, supported by a PPAP (Production Part Approval Process), and are ideal for use in engine management systems, body control electronics, and DC-DC converters. DMTH601xLPSQ MOSFETs offer low R_DS(ON), low input capacitance, and fast switching speed. Offered in Diodes Incorporated's unique PowerDI^®5060 package, DMTH601xLPSQ MOSFETs are rated to +175ºC and feature an off-board height of <1.1mm. This makes DMTH601xLPSQ MOSFETs well suited for high-temperature environments and low-profile applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.