FFSH4065BDN-F085

Name: onsemi FFSH4065BDN-F085
Brand: onsemi
SKU: 863-FFSH4065BDN-F085
Price: 452.54 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

863-FFSH4065BDN-F085

製造商編號：

FFSH4065BDN-F085

製造商：

onsemi

說明：

碳化矽肖特基二極管 650V

規格書:

FFSH4065BDN-F085 規格書

ECAD模型:

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庫存量: 680

庫存：: 680 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 10 週工廠預計生產時間數量大於所顯示的數量。

數量超過680會受到最小訂單要求的限制。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$452.54	NT$452.54
	NT$257.38	NT$2,573.80
	NT$235.28	NT$28,233.60
	NT$227.12	NT$231,662.40
2,520	報價

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽肖特基二極管
RoHS:
REACH - SVHC:
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
配置:	Dual Anode Common Cathode
If - 順向電流:	40 A
Vrrm - 重複反向電壓:	650 V
Vf - 順向電壓:	1.38 V
Ifsm - 順向浪湧電流:	84 A
Ir - 反向電流:	40 uA
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	FFSH4065BDN-F085
資格:	AEC-Q101
封裝:	Tube
品牌:	onsemi
Pd - 功率消耗 :	127 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	30
子類別:	Diodes & Rectifiers
公司名稱:	EliteSiC
Vr - 反向電壓:	650 V

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篩選文檔:

規格書

FFSH4065BDN-F085 規格書

PCN

Material Composition Disclosure

CNHTS:: 8541590000
USHTS:: 8541100080
ECCN:: EAR99

FFSPx065BDN-F085 Automotive SiC Schottky Diodes

onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.