FP35R12N2T7BPSA2

Infineon Technologies
726-FP35R12N2T7BPSA2
FP35R12N2T7BPSA2

製造商:

說明:
IGBT 模組 1200 V, 35 A PIM IGBT module

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 15

庫存:
15 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$2,225.30 NT$2,225.30
NT$1,930.86 NT$19,308.60
NT$1,685.38 NT$176,964.90

商品屬性 屬性值 選擇屬性
Infineon
產品類型: IGBT 模組
RoHS:  
IGBT Silicon Modules
3-Phase Inverter
1.2 kV
1.6 V
35 A
100 nA
- 40 C
+ 175 C
Tray
品牌: Infineon Technologies
產品類型: IGBT Modules
原廠包裝數量: 15
子類別: IGBTs
技術: Si
零件號別名: FP35R12N2T7 SP005597311 FP35R12N2T7BPSA1
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所選屬性: 0

CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.

1200V PIM 3 Phase Input Rectifiers

Infineon Technologies 1200V PIM 3 Phase Input Rectifiers are EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules. The rectifiers feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with the integration of rectifier and brake chopper enables system cost savings.