FP35R12N2T7BPSA2

Name: Infineon FP35R12N2T7BPSA2
Brand: Infineon Technologies
SKU: 726-FP35R12N2T7BPSA2
Price: 2419.88 TWD
Availability: InStock

Mouser 編號：

726-FP35R12N2T7BPSA2

製造商編號：

FP35R12N2T7BPSA2

製造商：

Infineon Technologies

說明：

IGBT 模組 1200 V, 35 A PIM IGBT module

規格書:

FP35R12N2T7BPSA2 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Infineon Technologies FP35R12N2T7BPSA2的資訊

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	IGBT 模組
RoHS:
產品:	IGBT Silicon Modules
配置:	3-Phase Inverter
集電極-發射極最大電壓VCEO:	1.2 kV
集電極-發射極飽和電壓:	1.6 V
連續集電極電流在25 C:	35 A
柵射極漏電電流:	100 nA
最低工作溫度:	- 40 C
最高工作溫度:	+ 175 C
技術:	Si
封裝:	Tray
品牌:	Infineon Technologies
產品類型:	IGBT Modules
原廠包裝數量:	15
子類別:	Discrete and Power Modules
零件號別名:	FP35R12N2T7 SP005597311 FP35R12N2T7BPSA1

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

FP35R12N2T7BPSA2 規格書 (PDF)

此功能需要啟用JavaScript。

合規守則

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

原產地分類

原產國:: 奧地利
封裝原產國:: 匈牙利
擴散國:: 奧地利

出貨時，國家可能會有所變更。

1200V PIM 3 Phase Input Rectifiers

Infineon Technologies 1200V PIM 3 Phase Input Rectifiers are EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules. The rectifiers feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with the integration of rectifier and brake chopper enables system cost savings.

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.