FS1150R08A8P3CHPSA1

Infineon Technologies
726-FS1150R08A8P3CHP
FS1150R08A8P3CHPSA1

製造商:

說明:
離散半導體模組 HybridPACK Drive G2 module

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庫存量: 3

庫存:
3 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
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總價:
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Pricing (TWD)

數量 單價
總價
NT$19,581.28 NT$19,581.28
NT$17,433.50 NT$209,202.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 離散半導體模組
RoHS:  
Power Modules
Drive G2 Module
SiC
1.76 V
400 V
Press Fit
DIP-7
- 40 C
+ 175 V
HybridPACK
Tray
品牌: Infineon Technologies
配置: Sixpack
下降時間: 91 ns
Id - C連續漏極電流: 600 A
Pd - 功率消耗 : 1 kW
產品類型: Discrete Semiconductor Modules
上升時間: 50 ns
原廠包裝數量: 6
子類別: Discrete and Power Modules
標準斷開延遲時間: 929 ns
標準開啟延遲時間: 222 ns
Vds - 漏-源擊穿電壓: 750 V
Vgs th - 門源門限電壓 : 5.8 V
零件號別名: FS1150R08A8P3C SP006071554
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.