FS520R12A8P1LBHPSA1

Infineon Technologies
726-FS520R12A8P1LBHP
FS520R12A8P1LBHPSA1

製造商:

說明:
IGBT 模組 HYBRID PACK DRIVE G2 SI

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庫存量: 1

庫存:
1
可立即送貨
在途量:
12
預期2026/2/13
工廠前置作業時間:
26
工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$16,928.94 NT$16,928.94
NT$15,744.04 NT$188,928.48

商品屬性 屬性值 選擇屬性
Infineon
產品類型: IGBT 模組
RoHS:  
IGBT Modules
Hex
1.2 kV
1.48 V
520 A
400 nA
1 kW
- 40 C
+ 175 C
Tray
品牌: Infineon Technologies
柵極發射機最大電壓: 20 V
安裝風格: Press Fit
產品類型: IGBT Modules
系列: Drive G2
原廠包裝數量: 6
子類別: Discrete and Power Modules
技術: Si
公司名稱: HybridPACK
零件號別名: FS520R12A8P1LB SP005850366
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CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.