IDH16G65C5XKSA2

Infineon Technologies
726-IDH16G65C5XKSA2
IDH16G65C5XKSA2

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說明：
碳化矽肖特基二極管 SIC DIODES

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庫存量: 2,334

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2,334 可立即送貨
工廠前置作業時間：
11 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
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估計關稅:

Pricing (TWD)

數量 單價
總價
NT$184.96 NT$184.96
NT$83.64 NT$836.40
NT$82.62 NT$8,262.00
NT$81.94 NT$40,970.00
NT$79.22 NT$79,220.00
NT$77.18 NT$385,900.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220-2
Single
16 A
650 V
1.5 V
124 A
850 nA
- 55 C
+ 175 C
XDH16G65
Tube
品牌: Infineon Technologies
Pd - 功率消耗 : 129 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 500
子類別: Diodes & Rectifiers
公司名稱: CoolSiC
Vr - 反向電壓: 650 V
零件號別名: IDH16G65C5 SP001632392
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

碳化矽CoolSiC™ MOSFET和二極體

英飛凌碳化矽CoolSiC™ MOSFET和二極體為能滿足更智慧節能的發電、電力輸送及用電需求的產品組合。CoolSiC產品組合能滿足客戶需求，幫助其縮小系統尺寸，降低中至高功率系統的成本，同時滿足最高的品質標準，延長系統使用壽命，可靠度大受保證。客戶一方面可透過CoolSiC達到最嚴格的效率目標，另一方面則能降低操作系統的成本。產品組合中包括CoolSiC肖特基二極體、CoolSiC混合式模組、CoolSiC MOSFET模組和獨立式裝置，以及用於驅動碳化矽裝置的EiceDRIVER™閘極驅動器IC。

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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