似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

IKP20N60T

Name: Infineon IKP20N60T
Brand: Infineon Technologies
SKU: 726-IKP20N60T
Price: 91.12 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

726-IKP20N60T

製造商編號：

IKP20N60T

製造商：

Infineon Technologies

說明：

IGBT LOW LOSS DuoPack 600V 20A

壽命週期:

壽命結束:

計劃停產且製造商將停止供貨。

規格書:

IKP20N60T 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2

庫存：: 2

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 3,000

預期2026/6/25
工廠前置作業時間：: 19

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$91.12	NT$91.12
	NT$52.70	NT$527.00
	NT$41.82	NT$4,182.00
	NT$32.98	NT$16,490.00
	NT$28.25	NT$28,250.00
	NT$27.17	NT$135,850.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-220-3
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	600 V
集電極-發射極飽和電壓:	1.5 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	41 A
Pd - 功率消耗 :	166 W
最低工作溫度:	- 40 C
最高工作溫度:	+ 175 C
系列:	TRENCHSTOP IGBT
封裝:	Tube
品牌:	Infineon Technologies
柵射極漏電電流:	100 nA
產品類型:	IGBT Transistors
原廠包裝數量:	500
子類別:	IGBTs
公司名稱:	TRENCHSTOP
零件號別名:	SP000683066 IKP2N6TXK IKP20N60TXKSA1
每件重量:	6 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

IKP20N60T 規格書 (PDF)

EOL

Product Discontinuation Notification 2025-9-15 (PDF)

Product Catalogs

此功能需要啟用JavaScript。

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Ultrafast 600V Trench IGBTs

Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Q_rr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low V_ce(on) and positive V_ce(on) temperature coefficient for easy paralleling.

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.

300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.