IQEH64NE2LM7UCGSCATMA1

Infineon Technologies
726-IQEH64NE2LM7UCGS
IQEH64NE2LM7UCGSCATMA1

製造商:

說明:
MOSFET OptiMOS 7 Power -Transistor, 25 V

壽命週期:
新產品:
該製造商的新產品。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 4,800

庫存:
4,800 可立即送貨
工廠前置作業時間:
52 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$98.94 NT$98.94
NT$63.92 NT$639.20
NT$46.92 NT$4,692.00
NT$39.44 NT$19,720.00
NT$33.83 NT$33,830.00
NT$32.13 NT$80,325.00
完整捲(訂購多個6000)
NT$29.92 NT$179,520.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
N-Channel
1 Channel
25 V
348 A
640 uOhms
16 V
2 V
22 nC
- 55 C
+ 175 C
130 W
Enhancement
OptiMOS
Reel
Cut Tape
品牌: Infineon Technologies
配置: Single
下降時間: 3.6 ns
互導 - 最小值: 50 S
產品類型: MOSFETs
上升時間: 1.6 ns
系列: OptiMOS 7
原廠包裝數量: 6000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 25.5 ns
標準開啟延遲時間: 6.2 ns
零件號別名: IQEH64NE2LM7UCGSC SP006008732
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOMoss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.