IRF540ZPBF

Infineon Technologies
942-IRF540ZPBF
IRF540ZPBF

製造商:

說明:
MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,898

庫存:
3,898
可立即送貨
在途量:
2,000
預期2026/3/18
17,000
預期2026/4/2
工廠前置作業時間:
17
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$23.46 NT$23.46
NT$20.03 NT$200.30
NT$18.67 NT$1,867.00
NT$16.90 NT$8,450.00
NT$15.30 NT$15,300.00
NT$14.72 NT$73,600.00
NT$14.42 NT$360,500.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
36 A
26.5 mOhms
- 20 V, 20 V
2 V
42 nC
- 55 C
+ 175 C
92 W
Enhancement
Tube
品牌: Infineon Technologies
配置: Single
產品類型: MOSFETs
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
每件重量: 2 g
找到產品:
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.