IS42S16400N-6BLI

ISSI
870-IS42S16400N-6BLI
IS42S16400N-6BLI

Mfr.:

Description:
DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT

Datasheet:
ECAD Model:
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Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
16 bit
166 MHz
BGA-54
4 M x 16
5.4 ns
3 V
3.6 V
- 40 C
+ 85 C
Brand: ISSI
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 348
Subcategory: Memory & Data Storage
Supply Current - Max: 80 mA
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Attributes selected: 0

Datasheet

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Compliance Codes
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan, China
Assembly Country of Origin:
Not available
Country of Diffusion:
Taiwan, China
The country is subject to change at the time of shipment.

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

In Stock: 35

Stock:
35
Can Ship Immediately
On Order:
1,740
Factory Lead-Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$258.84 NT$258.84
NT$240.91 NT$2,409.10
NT$233.74 NT$5,843.50
NT$222.99 NT$11,149.50
NT$217.61 NT$21,761.00
NT$214.38 NT$53,595.00
NT$209.01 NT$72,735.48

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