IS42S32800J-7BLI

ISSI
870-42S32800J7BLI
IS42S32800J-7BLI

製造商:

說明:
DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 6,135

庫存:
6,135 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1   上限: 182
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$286.62 NT$286.62
NT$266.56 NT$2,665.60
NT$258.40 NT$6,460.00
NT$252.28 NT$12,614.00
NT$241.40 NT$24,140.00

商品屬性 屬性值 選擇屬性
ISSI
產品類型: DRAM
RoHS:  
SDRAM
256 Mbit
32 bit
143 MHz
BGA-90
8 M x 32
6.5 ns
3 V
3.6 V
- 40 C
+ 85 C
IS42S32800J
品牌: ISSI
組裝國家: Not Available
擴散國: Not Available
原產國: TW
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 240
子類別: Memory & Data Storage
電源電流 - 最大值: 170 mA
每件重量: 1.865 g
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所選屬性: 0

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320024
JPHTS:
854232021
MXHTS:
8542320299
ECCN:
EAR99

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.