MR2A08AMYS35

Name: Everspin Technologies MR2A08AMYS35
Brand: Everspin Technologies
SKU: 936-MR2A08AMYS35
Price: 2140.6 TWD
Availability: OutOfStock

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Mouser 編號：

936-MR2A08AMYS35

製造商編號：

MR2A08AMYS35

製造商：

Everspin Technologies

說明：

MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM

規格書:

MR2A08AMYS35 規格書 (PDF)

ECAD模型:

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商品屬性	屬性值	選擇屬性
製造商:	Everspin Technologies
產品類型:	MRAM
RoHS:
封裝/外殼:	TSOP-II-44
接口類型:	Parallel
存儲容量:	4 Mbit
組織:	512 k x 8
數據匯流排寬度:	8 bit
存取時間:	35 ns
電源電壓 - 最小值:	3 V
電源電壓 - 最大值:	3.6 V
運作供電電流:	30 mA, 90 mA
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
系列:	MR2A08A
封裝:	Tray
品牌:	Everspin Technologies
濕度敏感:	Yes
安裝風格:	SMD/SMT
Pd - 功率消耗 :	600 mW
產品類型:	MRAM
原廠包裝數量:	135
子類別:	Memory & Data Storage
公司名稱:	Parallel I/O (x8)

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篩選文檔:

規格書

MR2A08AMYS35 規格書 (PDF)

PCN

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合規守則

CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

原產地分類

原產國:: 中國台灣
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.