RBR40NS30ATL

Name: ROHM Semiconductor RBR40NS30ATL
Brand: ROHM Semiconductor
SKU: 755-RBR40NS30ATL
Price: 122.4 TWD
Availability: InStock

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Mouser 編號：

755-RBR40NS30ATL

製造商編號：

RBR40NS30ATL

製造商：

ROHM Semiconductor

說明：

肖特基二極體及整流器 Schottky Barrier Diode Low VF, 30V, 40A, TO-263S (D2PAK)

規格書:

RBR40NS30ATL 規格書

ECAD模型:

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庫存量: 945

庫存：: 945 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 12 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$122.40	NT$122.40
	NT$77.52	NT$775.20
	NT$54.40	NT$5,440.00
	NT$49.30	NT$24,650.00
完整捲（訂購多個1000）
	NT$42.16	NT$42,160.00
	NT$39.78	NT$79,560.00

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	肖特基二極體及整流器
RoHS:
產品:	Schottky Diodes
安裝風格:	SMD/SMT
封裝/外殼:	TO-263-3
配置:	Dual Anode Common Cathode
技術:	Si
If - 順向電流:	40 A
Vrrm - 重複反向電壓:	30 V
Vf - 順向電壓:	520 mV
Ifsm - 順向浪湧電流:	100 A
Ir - 反向電流:	600 uA
最高工作溫度:	+ 150 C
封裝:	Reel
封裝:	Cut Tape
品牌:	ROHM Semiconductor
產品類型:	Schottky Diodes & Rectifiers
原廠包裝數量:	1000
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	30 V
零件號別名:	RBR40NS30A

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篩選文檔:

規格書

RBR40NS30ATL 規格書

Other

Dimensions (PDF)

Specification Sheets

Technical Resources

Test/Quality Data

RoHS (PDF)

CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

RBR40NS Schottky Barrier Diodes

ROHM Semiconductor RBR40NS Schottky Barrier Diodes are designed for use in switching power supplies and feature 100A peak forward surge current. These diodes offer high reliability, low forward voltage, and 40A average rectified forward current. The RBR40NS Schottky barrier diodes are available in three variants with 30V, 40V, and 60V repetitive peak reverse voltages. These diodes are designed using silicon epitaxial planar type construction and come in a TO-263AB (D2PAK) package. The RBR40NS Schottky barrier diodes are RoHS compliant and operate within the -55°C to 150°C temperature range.

RBRxx30ATL Low VF Type Schottky Barrier Diodes

ROHM Semiconductor RBRxx30ATL Schottky Barrier Diodes are cathode common dual type low V_F diodes with 30V reverse direct voltage (V_R). These diodes are manufactured using silicon epitaxial planar type construction and come in either TO-263S (D²PAK) or TO-252 (DPAK) packages. ROHM Semiconductor RBRxx60ANZ barrier diodes offer low V_F, high reliability, and operate at -55°C to +150°C temperature range. These Schottky barrier diodes are ideally suited for switching power supplies and general rectification.