RGSX5TS65DHRC11

ROHM Semiconductor
755-RGSX5TS65DHRC11
RGSX5TS65DHRC11

製造商:

說明:
IGBT 8s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT

壽命週期:
NRND:
不建議用於新設計。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 450

庫存:
450 可立即送貨
工廠前置作業時間:
22 週 工廠預計生產時間數量大於所顯示的數量。
數量超過450會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$384.54 NT$384.54
NT$230.18 NT$2,301.80
NT$196.18 NT$19,618.00
NT$183.60 NT$82,620.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: IGBT
RoHS:  
Si
TO-247N-3
Through Hole
Single
650 V
2.15 V
30 V
114 A
404 W
- 40 C
+ 175 C
Tube
品牌: ROHM Semiconductor
柵射極漏電電流: 200 nA
產品類型: IGBT Transistors
原廠包裝數量: 450
子類別: IGBTs
零件號別名: RGSX5TS65DHR
找到產品:
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所選屬性: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not
intended for volume automotive production without ROHM
Semiconductors prior approval.

Please contact ROHM Semiconductor for Production Part Approval
Process (PPAP) requirements or contact a Mouser Technical Sales
Representative for further assistance.

5-0617-50

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CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RGSX5TS65 650V 75A Field Stop Trench IGBTs

ROHM Semiconductor RGSX5TS65 650V 75A Field Stop Trench IGBTs feature a low collector-emitter saturation voltage. The RGSX5TS65 has a short circuit withstand time of 8μs. It's qualified to AEC-Q101 and has Pb-free lead plating.