SBR1045SD1-T

Name: Diodes Incorporated SBR1045SD1-T
Brand: Diodes Incorporated
SKU: 621-SBR1045SD1-T
Price: 24.14 TWD
Availability: InStock

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Mouser 編號：

621-SBR1045SD1-T

製造商編號：

SBR1045SD1-T

製造商：

Diodes Incorporated

說明：

肖特基二極體及整流器 10A SBR 45V VRRM 32V Vr 10A 180 IFSM

規格書:

SBR1045SD1-T 規格書 (PDF)

ECAD模型:

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庫存量: 3,206

庫存：: 3,206 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 12 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$24.14	NT$24.14
	NT$18.22	NT$182.20
	NT$14.76	NT$1,476.00
	NT$11.42	NT$5,710.00
完整捲（訂購多個1200）
	NT$8.77	NT$10,524.00
	NT$8.50	NT$20,400.00

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	肖特基二極體及整流器
RoHS:
REACH - SVHC:
產品:	Schottky Rectifiers
安裝風格:	Through Hole
封裝/外殼:	DO-201AD-2
配置:	Single
技術:	Si
If - 順向電流:	10 A
Vrrm - 重複反向電壓:	45 V
Vf - 順向電壓:	500 mV
Ifsm - 順向浪湧電流:	180 A
Ir - 反向電流:	50 uA
最低工作溫度:	- 65 C
最高工作溫度:	+ 150 C
系列:	SBR1045
封裝:	Reel
封裝:	Cut Tape
品牌:	Diodes Incorporated
產品類型:	Schottky Diodes & Rectifiers
原廠包裝數量:	1200
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	32 V
每件重量:	1.200 g

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篩選文檔:

規格書

SBR1045SD1-T 規格書 (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Automotive Super Barrier Rectifiers

Diodes Incorporated Automotive Super Barrier Rectifiers (SBR) are designed with patented Super Barrier Technology that provides superior avalanche capability. These Diodes Incorporated SBR rectifiers offer low forward voltage drop and are ideal for automotive applications. The automotive SBR diodes have a lead-free finish while qualified to the AEC-Q101 standard that delivers high reliability. These SBR rectifiers are available in 1A to 30A forward current range and 500mV to 0.7V forward voltage range.

SBR® Super Barrier Rectifiers

Diodes Inc SBR^® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.