SCS210KGC17

ROHM Semiconductor
755-SCS210KGC17
SCS210KGC17

製造商：

說明：
碳化矽肖特基二極管 RECT 1.2KV 10A RDL SIC SKY

規格書:
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庫存量: 752

庫存：
752 可立即送貨
工廠前置作業時間：
21 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$319.60 NT$319.60
NT$176.46 NT$1,764.60
NT$162.52 NT$16,252.00
NT$149.94 NT$149,940.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220ACG-2
Single
10 A
1.2 kV
1.6 V
42 A
200 uA
+ 175 C
Tube
品牌: ROHM Semiconductor
Pd - 功率消耗 : 150 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 1000
子類別: Diodes & Rectifiers
Vr - 反向電壓: 1.2 kV
零件號別名: SCS210KG
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所選屬性: 0

規格書

Specification Sheets

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USHTS:
8541100080
ECCN:
EAR99

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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