SSM3J338R,LF

Name: Toshiba SSM3J338R,LF
Brand: Toshiba
SKU: 757-SSM3J338RLF
Price: 16.66 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

757-SSM3J338RLF

製造商編號：

SSM3J338R,LF

製造商：

Toshiba

說明：

MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A

規格書:

SSM3J338R,LF 規格書 (PDF)

ECAD模型:

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庫存量: 161,153

庫存：: 161,153

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 72,000

預期2026/5/4
工廠前置作業時間：: 18

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$16.66	NT$16.66
	NT$10.17	NT$101.70
	NT$6.60	NT$660.00
	NT$4.86	NT$2,430.00
	NT$4.35	NT$4,350.00
完整捲（訂購多個3000）
	NT$3.33	NT$9,990.00
	NT$3.23	NT$19,380.00
	NT$2.79	NT$25,110.00
	NT$2.69	NT$64,560.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Toshiba
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	SOT-23F
晶體管極性:	P-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	12 V
Id - C連續漏極電流:	6 A
Rds On - 漏-源電阻:	17.6 mOhms
Vgs - 閘極-源極電壓:	- 8 V, 8 V
Vgs th - 門源門限電壓 :	300 mV
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	1 W
通道模式:	Enhancement
公司名稱:	U-MOSVII
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Toshiba
配置:	Single
產品類型:	MOSFETs
系列:	SSM3J338
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 P-Channel
標準斷開延遲時間:	383 ns
標準開啟延遲時間:	65 ns
每件重量:	11 mg

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所選屬性: 0

篩選文檔:

規格書

SSM3J338R,LF 規格書 (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVII MOSFETs

Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.