SSM6N67NU,LF

Name: Toshiba SSM6N67NU,LF
Brand: Toshiba
SKU: 757-SSM6N67NULF
Price: 20.74 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

757-SSM6N67NULF

製造商編號：

SSM6N67NU,LF

製造商：

Toshiba

說明：

MOSFET LowON Res MOSFET ID=4A VDSS=30V

規格書:

SSM6N67NU,LF 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Toshiba SSM6N67NU,LF的資訊

庫存量: 30,311

庫存：: 30,311

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 45,000

預期2026/3/6

72,000

預期2026/5/4
工廠前置作業時間：: 16

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$20.74	NT$20.74
	NT$12.89	NT$128.90
	NT$8.26	NT$826.00
	NT$6.26	NT$3,130.00
	NT$5.54	NT$5,540.00
完整捲（訂購多個3000）
	NT$4.52	NT$13,560.00
	NT$4.18	NT$25,080.00
	NT$3.60	NT$32,400.00
	NT$3.47	NT$83,280.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Toshiba
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	UDFN-6
晶體管極性:	N-Channel
通道數:	2 Channel
Vds - 漏-源擊穿電壓:	30 V
Id - C連續漏極電流:	4 A
Rds On - 漏-源電阻:	39.1 mOhms
Vgs - 閘極-源極電壓:	- 8 V, 12 V
Vgs th - 門源門限電壓 :	400 mV
Qg - 閘極充電:	3.2 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	1 W
通道模式:	Enhancement
資格:	AEC-Q101
公司名稱:	U-MOSVII-H
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Toshiba
配置:	Dual
互導 - 最小值:	6 S
產品類型:	MOSFETs
系列:	SSM6N67NU
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	17 ns
標準開啟延遲時間:	26 ns
每件重量:	8.500 mg

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所選屬性: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

篩選文檔:

規格書

SSM6N67NU,LF 規格書 (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.