STGF30M65DF2

STMicroelectronics
511-STGF30M65DF2
STGF30M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220FP-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
38 W
- 55 C
+ 175 C
STGF30M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBTs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

In Stock: 1,173

Stock:
1,173 Can Ship Immediately
Factory Lead-Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$120.46 NT$120.46
NT$60.23 NT$602.30
NT$54.49 NT$5,449.00
NT$44.10 NT$22,050.00
NT$41.94 NT$41,940.00
NT$40.87 NT$81,740.00

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