STGP30H60DFB

STMicroelectronics
511-STGP30H60DFB
STGP30H60DFB

製造商:

說明:
IGBT Trench gate field-stop 600 V, 30 A high speed HB series IGBT

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,169

庫存:
3,169 可立即送貨
工廠前置作業時間:
15 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$97.58 NT$97.58
NT$48.28 NT$482.80
NT$43.52 NT$4,352.00
NT$35.36 NT$17,680.00
NT$32.37 NT$32,370.00
NT$30.77 NT$61,540.00
NT$29.24 NT$146,200.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
STGP30H60DFB
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 60 A
柵射極漏電電流: +/- 250 nA
產品類型: IGBT Transistors
原廠包裝數量: 1000
子類別: IGBTs
每件重量: 2 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.