STI28N60M2

Name: STMicroelectronics STI28N60M2
Brand: STMicroelectronics
SKU: 511-STI28N60M2
Price: 113.22 TWD
Availability: InStock

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Mouser 編號：

511-STI28N60M2

製造商編號：

STI28N60M2

製造商：

STMicroelectronics

說明：

MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET in D2PAK package

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規格書:

STI28N60M2 規格書 (PDF)

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

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最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$113.22	NT$113.22
	NT$62.22	NT$622.20
	NT$51.00	NT$5,100.00
	NT$44.88	NT$22,440.00
	NT$44.54	NT$44,540.00
	NT$44.20	NT$88,400.00
	NT$43.86	NT$219,300.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	22 A
Rds On - 漏-源電阻:	135 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	2 V
Qg - 閘極充電:	36 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	170 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	8 ns
產品類型:	MOSFETs
上升時間:	7.2 ns
系列:	STI28N60M2
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	100 ns
標準開啟延遲時間:	14.5 ns
每件重量:	1.460 g

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篩選文檔:

規格書

STI28N60M2 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.