TJ30S06M3L,LXHQ
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TJ30S06M3L,LXHQ
TJ30S06M3L,LXHQ
製造商：
說明：
MOSFET 68W 1MHz Automotive; AEC-Q101
MOSFET 68W 1MHz Automotive; AEC-Q101
庫存量: 3,702
-
庫存：
-
3,702 可立即送貨發生意外錯誤了。請稍後再試。
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工廠前置作業時間：
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4 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (TWD)
| 數量 | 單價 |
總價
|
|---|---|---|
| NT$53.72 | NT$53.72 | |
| NT$36.04 | NT$360.40 | |
| NT$25.16 | NT$2,516.00 | |
| NT$19.86 | NT$9,930.00 | |
| NT$18.16 | NT$18,160.00 | |
| 完整捲（訂購多個2000） | ||
| NT$16.18 | NT$32,360.00 | |
| NT$14.69 | NT$58,760.00 | |
規格書
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2