TJ60S04M3L,LXHQ
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TJ60S04M3L,LXHQ
TJ60S04M3L,LXHQ
製造商：
說明：
MOSFET 90W 1MHz Automotive; AEC-Q101
MOSFET 90W 1MHz Automotive; AEC-Q101
庫存量: 2,614
-
庫存：
-
2,614 可立即送貨發生意外錯誤了。請稍後再試。
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工廠前置作業時間：
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11 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (TWD)
| 數量 | 單價 |
總價
|
|---|---|---|
| NT$58.14 | NT$58.14 | |
| NT$41.14 | NT$411.40 | |
| NT$28.36 | NT$2,836.00 | |
| NT$22.71 | NT$11,355.00 | |
| NT$20.84 | NT$20,840.00 | |
| 完整捲（訂購多個2000） | ||
| NT$18.67 | NT$37,340.00 | |
| NT$17.34 | NT$69,360.00 | |
| 24,000 | 報價 | |
規格書
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2